DC Models of CNTFETs: A Comparative Analysis

Marani, Roberto; Perri, Anna Gina

DC Models of CNTFETs: A Comparative Analysis

Articles in Press

Document Type : Full Paper

Authors

Roberto Marani ¹

Anna Gina Perri ²

¹ Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy, 70125, Bari, Italy

² Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, 70126, Bari, Italy

Abstract

In this paper we present a comparison among I-V models of CNTFETs proposed in literature in order to determine the model more easily implementable in simulation software for electronic circuit design. In particular we have compared the CNTFET model, already proposed by us, with Deng-Wong’s and Koswatta’s models. Our model, already structured to implement in simulator software, has been modified to characterize the I-V characteristics of CNTFETs below threshold, because the other examined models consider the behaviour of device in sub-threshold regime. In spite of other models, our model seems to allow an easier implementation in the computer aided design of the most common analogue and digital circuits, showing a good agreement between the experimental and simulated characteristics, with processing times practically instant.

Keywords

Nanoelectronic Device

Nanotechnology

Carbon Nanotube Field Effect Transistors

Modeling

Output and Transfer characteristics

Subjects